型号:

DMG2302U-7

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET N-CH 20V 4.2A SOT23
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
DMG2302U-7 PDF
标准包装 1
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 4.2A
开态Rds(最大)@ Id, Vgs @ 25° C 90 毫欧 @ 3.6A,4.5V
Id 时的 Vgs(th)(最大) 1V @ 50µA
闸电荷(Qg) @ Vgs 7nC @ 4.5V
输入电容 (Ciss) @ Vds 594.3pF @ 10V
功率 - 最大 800mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 SOT-23-3
包装 剪切带 (CT)
产品目录页面 1577 (CN2011-ZH PDF)
其它名称 DMG2302U-7DICT
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